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DST3904DJ 40V DUAL NPN SURFACE MOUNT TRANSISTOR Features * * * * * * * VCEO = 40V IC = 200mA Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Ultra Small Package Mechanical Data * * * * * Case: SOT-963 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) NEW PRODUCT SOT-963 Top View Device Schematic Ordering Information Device DST3904DJ-7 Notes: Packaging SOT-963 Shipping 10,000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com Marking Information T8 T8 = Product Type Marking Code DST3904DJ Document number: DS32038 Rev. 2 - 2 1 of 6 www.diodes.com April 2010 (c) Diodes Incorporated DST3904DJ Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA NEW PRODUCT Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout. Symbol PD RJA TJ, TSTG Value 300 417 -55 to +150 Unit mW C/W C 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 370C/W P(pk) D = 0.02 t1 0.01 D = 0.01 D = 0.005 t2 T J - T A = P * RJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 0.4 10 100 1,000 1,000 P(pk), PEAK TRANSIENT POWER (W) 100 RJA(t) = r(t) * RJA RJA = 370C/W TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 PD, POWER DISSIPATION (W) Single Pulse 0.3 Note 3 10 0.2 1 0.1 0.1 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Fig. 3 Power Dissipation vs. Ambient Temperature DST3904DJ Document number: DS32038 Rev. 2 - 2 2 of 6 www.diodes.com April 2010 (c) Diodes Incorporated DST3904DJ Electrical Characteristics @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 40 70 100 60 30 0.65 1.0 0.5 100 1.0 300 Max 50 50 300 0.20 0.30 0.85 0.95 4.0 8.5 10 8.0 400 40 35 35 200 50 Unit V V V nA nA Test Condition IC = 10A, IE = 0 IC = 1.0mA, IB = 0 IE = 10A, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) Cobo Cibo hie hre hfe hoe fT td tr ts tf V V pF pF k -4 x 10 S MHz ns ns ns ns 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% 0.14 IB = 2mA 400 IB = 1.6mA IB = 1.4mA IB = 1.2mA IB = 1mA IB = 1.8mA T A = 150C VCE = 5V 0.12 IC, COLLECTOR CURRENT (A) 0.10 0.08 0.06 hFE, DC CURRENT GAIN 300 T A = 125C TA = 85C IB = 0.8mA IB = 0.6mA IB = 0.4mA 200 T A = 25C 0.04 IB = 0.2mA 100 TA = -55C 0.02 0 0 0.1 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current DST3904DJ Document number: DS32038 Rev. 2 - 2 3 of 6 www.diodes.com April 2010 (c) Diodes Incorporated DST3904DJ 1 IC/IB = 10 1 IC/IB = 20 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT T A = 150C 0.1 TA = 150C TA = 125C TA = 85C T A = 25C TA = -55C 0.1 TA = 125C T A = 85C T A = -55C TA = 25C 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current Gain = 10 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 TA = 25C TA = -55C VCE = 5V 1.2 1.0 0.8 TA = -55C 0.6 0.5 0.4 0.3 0.1 TA = 85C TA = 150C TA = 125C 0.6 TA = 25C TA = 150C 0.4 TA = 125C T A = 85C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current TA = 25C Single, Non-Repetitive Pulse 0.2 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 10 IC, COLLECTOR CURRENT (A) 1 PW = 1ms PW = 100s DC 0.1 PW = 100ms PW = 10ms 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER CURRENT (V) Fig. 10 Safe Operation Area (NPN) DST3904DJ Document number: DS32038 Rev. 2 - 2 4 of 6 www.diodes.com April 2010 (c) Diodes Incorporated DST3904DJ Package Outline Dimensions D e1 L E1 E e b (6 places) c A A1 SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm NEW PRODUCT Suggest Pad Layout C C Y1 Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y (6X) X (6X) DST3904DJ Document number: DS32038 Rev. 2 - 2 5 of 6 www.diodes.com April 2010 (c) Diodes Incorporated DST3904DJ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com NEW PRODUCT DST3904DJ Document number: DS32038 Rev. 2 - 2 6 of 6 www.diodes.com April 2010 (c) Diodes Incorporated |
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